Gallium arsenide (GaAs) is a group IIIA and VA compound semiconductor material that is commonly used to manufacture microwave integrated circuits, semiconductor lasers, solar cells, and other devices. It is made up of two elements: gallium and arsenic. Because of their high electron mobility and high saturation electron velocity, as well as their anti-interference, low noise and high voltage resistance, high temperature resistance, and high frequency use, gallium arsenide compound semiconductors are particularly well suited for high frequency transmission in wireless communications.
Alfa Chemistry provides one-of-a-kind surface modification services for GaAs substrates with functional surfaces that improve performance in a variety of applications. You may improve the surface features of nearly any GaAs-related product using our extensive and specialized surface treatment methods. Please contact us if you'd like to simply change the surface properties of your items.
Alfa Chemistry provides customers with a range of surface coating processes for semiconductor materials that can be used to functionalize GaAs substrates and impart a variety of surface features. The following are some of our surface alteration technologies, but they are not exhaustive. Please contact us for more information on our technologies.
Case 1: Epoxy Adhesive Layer Prevents Gallium Arsenide Photocorrosion
Gallium arsenide (GaAs) is unstable in O2 and aqueous media. Its corrosion has been the subject of intensive research. Various attempts have been made to prevent corrosion of GaAs. Organic thiols with various organic functional groups can passivate GaAs. other organic molecules and polymeric materials with specific functional groups have also been used for the same purpose. We have coated GaAs with a thin bonded layer of epoxy resin to prevent photocorrosion. We chose a two-component room temperature curing adhesive paste.
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